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| savantic semiconductor product specification silicon npn power transistors 2SD880 description with t o-220c package complement to type 2sb834 low collector saturation voltage applications designed for use in audio frequency power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-peak 6 a i b base current 0.5 a p c collector dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -50~150 thermal characteristics symbol characteristics max unit r : jc thermal resistance junction to case 4.16 /w
savantic semiconductor product specification 2 silicon npn power transistors 2SD880 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 60 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 1.0 v v be base-emitter on voltage i c =0.5a ; v ce =5v 1.0 v i cbo collector cut-off current v cb =60v; i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe dc current gain i c =0.5a ; v ce =5v 60 300 f t transition frequency i c =0.5a ; v ce =5v;f=1mhz 3 mhz switching times t on turn-on time 1.2 s t s storage time 2.0 s t f fall time i c =10i b1 =-10i b2 =2a v cc =30v pw=30s 1.1 s h fe classifications o y gr 60-120 100-200 150-300 savantic semiconductor product specification 3 silicon npn power transistors 2SD880 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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